Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown

AN Xizhong; ZHANG Yu; LIU Guoquan; QIN Xiangge; WANG Fuzhong; LIU Shengxin

doi:10.13374/j.issn1001-053x.2002.02.013

Volume 24 Issue 2

Aug. 2021

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Article Navigation > Chinese Journal of Engineering > 2002 > 24(2): 143-148

AN Xizhong, ZHANG Yu, LIU Guoquan, QIN Xiangge, WANG Fuzhong, LIU Shengxin. Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown[J]. Chinese Journal of Engineering, 2002, 24(2): 143-148. doi: 10.13374/j.issn1001-053x.2002.02.013

Citation:

AN Xizhong, ZHANG Yu, LIU Guoquan, QIN Xiangge, WANG Fuzhong, LIU Shengxin. Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown[J]. Chinese Journal of Engineering, 2002, 24(2): 143-148. doi: 10.13374/j.issn1001-053x.2002.02.013

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Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown

doi: 10.13374/j.issn1001-053x.2002.02.013

1. Materials Science and Engineering School, UST Beijing, Beijing 100083, China;
2. Applied Science School, UST Beijing, Beijing 100083, China

Received Date: 2001-12-28
Available Online: 2021-08-21

Abstract

Abstract

The growth of {100} oriented CVD diamond film under three different chemical models (Including Harris model, F-B model and model proposed in this paper, respectively) is simulated in atomic scale by using KMC method. The results show that: (1) the growth mechanism from CH₃ is suitable for the growth of {100} oriented CVD diamond film; (2) the deposition rate under model containing double-carbon radicals is lower than that under model containing one-carbon radicals for {100} oriented diamond film;(3) the acquisition of diamond film with low surface roughness under relatively high deposition rate is feasible; (4) the simulation results for Harris' model are in well agreement with those predicted by Harris and experiment results.
- diamond film,
- kinetic Monte Carlo,
- chemical vapor deposition,
- atomic scale simulation,
- surface reaction model