Reaction of the SiO<sub>2</sub>/Ta Interface and its Influence on Cu Diffusion

LONG Shibing; MA Jidong; YU Guanghua; ZHAO Hongchen; ZHU Fengwu; ZHANG Guohai; XIA Yang

doi:10.13374/j.issn1001-053x.2003.01.010

Volume 25 Issue 1

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Article Navigation > Chinese Journal of Engineering > 2003 > 25(1): 33-35

LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO2/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

Citation:

LONG Shibing, MA Jidong, YU Guanghua, ZHAO Hongchen, ZHU Fengwu, ZHANG Guohai, XIA Yang. Reaction of the SiO₂/Ta Interface and its Influence on Cu Diffusion[J]. Chinese Journal of Engineering, 2003, 25(1): 33-35. doi: 10.13374/j.issn1001-053x.2003.01.010

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Reaction of the SiO₂/Ta Interface and its Influence on Cu Diffusion

doi: 10.13374/j.issn1001-053x.2003.01.010

1. Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083, China;
2. Microelectronic Research & Development Center, The Chinese Academy of Sciences, Beijing 100029, China

Received Date: 2002-01-03
Available Online: 2021-08-17

Abstract

Abstract

Ta films were deposited on Si substrates precoated with SiO₂ by magnetron sputtering. The SiO₂/Ta interface and the Ta₅Si₃ standard sample were investigated by X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is a thermodynamically favorable reaction at the SiO₂/Ta interface. The more stable products Ta₅Si₃ and Ta₂O₅ may be beneficial to stop the diffusion of Cu into SiO₂.
- copper interconnection,
- diffusion barrier,
- interface reaction,
- X-ray photoelectron spectroscopy