用熱激發電流法研究金剛石薄膜中的陷阱

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用熱激發電流法研究金剛石薄膜中的陷阱

崔聰悟, 王建軍, 馬星橋, 伍瑜

文章導航 > 工程科學學報 > 1996 > 18(2): 145-149

崔聰悟, 王建軍, 馬星橋, 伍瑜. 用熱激發電流法研究金剛石薄膜中的陷阱[J]. 工程科學學報, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

引用本文:

崔聰悟, 王建軍, 馬星橋, 伍瑜. 用熱激發電流法研究金剛石薄膜中的陷阱[J]. 工程科學學報, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

Cui Congwu, Wang Jianjun, Ma Xingqiao, Wu Yu. Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements[J]. Chinese Journal of Engineering, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

Citation:

Cui Congwu, Wang Jianjun, Ma Xingqiao, Wu Yu. Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements[J]. Chinese Journal of Engineering, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

崔聰悟, 王建軍, 馬星橋, 伍瑜. 用熱激發電流法研究金剛石薄膜中的陷阱[J]. 工程科學學報, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

引用本文:

崔聰悟, 王建軍, 馬星橋, 伍瑜. 用熱激發電流法研究金剛石薄膜中的陷阱[J]. 工程科學學報, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

Cui Congwu, Wang Jianjun, Ma Xingqiao, Wu Yu. Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements[J]. Chinese Journal of Engineering, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

Citation:

Cui Congwu, Wang Jianjun, Ma Xingqiao, Wu Yu. Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements[J]. Chinese Journal of Engineering, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

用熱激發電流法研究金剛石薄膜中的陷阱

doi: 10.13374/j.issn1001-053x.1996.02.010

1. 中國科學院高能物理研究所同步輻射室, 北京 100039;
2. 北京科技大學材料科學與工程系, 北京 100083;
3. 北京科技大學物理系, 北京 100083

基金項目:

國家“863計劃”項目

作者簡介:
崔聰悟 27歲碩士

中圖分類號: TN304.1;O484.4
計量
- 文章訪問數: 209
- HTML全文瀏覽量: 74
- PDF下載量: 4
- 被引次數: 0
出版歷程
- 收稿日期: 1995-09-10
- 網絡出版日期: 2021-11-13

Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements

1. BSRL, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, PRC;
2. Department of Material Science, USTB, Beijing 100083, PRC;
3. Department of Physics, USTB, Beijing 100083, PRC

摘要: 對微波等離子體化學氣相沉積(MPCVD)的硅襯底金剛石薄膜,做了在液氮溫區注入載流子,升溫測其電流-溫度關系的實驗.觀察到as-grown樣品有明顯的熱激發電流峰.重復實驗時,峰基本消失.經氫等離子體在~900℃處理2.5h后,再重復實驗,該峰又出現.推斷熱激發電流峰是由硅襯底金剛石薄膜內氫致陷阱中的載流子撤空引起的.這些能級在金剛石禁帶中的陷阱是可以通過適當熱處理消除的.
- 金剛石膜 /
- 缺陷/熱激發電流
Abstract: Carrier injection under liquid nitrogen temperature followed by thermal stimulated current(TSC) measurements were carried out for MPCVD diamond films. TSC peaks were observed obviously for as-grown samples.The peaks,however,almost disappeared after the first heating process.Having undergone hydrogen plasma treatment at ~900℃ for 2.5 hours for one sample,the peaks emerge again. Thermal stimulated traps emptying is postulated to be the origin of the TSC peaks, and the traps are related to hydrogen implantation.These traps,which energy level located in the band gap of diamond, can be eliminated via proper heat treatment.
- diamond films /
- defect, thermal stimulated current

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