Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen
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摘要: 用簧片振動法研究了GDa－Si：H薄膜氣氛滲氫后的內耗.當測量頻率為47.5Hz時，在－46℃處觀察到氫致內耗峰，其激活能為0.30±0.05eV，弛豫時間因子為3.52×10-9 s.Abstract: The internal friction of GD a-Si:H films charged with hydrogen in hydrogen atmosphere were measured by reed vibrating method. As a result, hydrogen related peak appears at 47.5Hz and -46℃ with activation energy (0.30 ±0.05)eV and relaxation time 3.52×10-9 s. Further research is needed to make the nature clear.
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Key words:
- internal friction /
- amorphous silicon /
- hydrogen related peak
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