Abstract: The band gap of GaN can be changed by substituting some Ga and N atoms by Zn and O atoms in order to improve its quantum efficiencies. Under NH₃ gas flow, the mixture of Ga₂O₃ and ZnO was calcined at 1123 K for 900 min. Ga_l-xZn_xNO yellow powders were prepared by the gas solid phase synthesis method. The influence of different synthesis process on the physical properties of the samples was investigated. The crystal structure and optical properties of Ga_l-xZn_xNO were characterized by XRD, TEM, UV-Vis measurements. The results indicate that the synthesized Ga_l-xZn_xNO is hexagonl wurtzite structure and has absorption peak around a wavelength of 400~450 nm.