Technique of preparing diamond films on poly-substrate by DC-arc plasma jet CVD for surface acoustic wave devices
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摘要: 為制備高質量的聲表面波器件,探索金剛石薄膜的沉積工藝,采用直流電弧等離子體噴射化學氣相沉積技術和特殊的復合襯底技術,在單晶硅襯底上制備了大面積、高質量的金剛石薄膜,成功解決了單晶硅襯底在沉積金剛石薄膜過程中產生的變形問題.研究了甲烷濃度和沉積溫度對金剛石薄膜質量的影響,優化了沉積工藝.結果表明,甲烷氣體體積分數為1.8%時,晶粒最為細小,同時金剛石薄膜的表面粗糙度最小,表面最為光滑.襯底溫度為1000℃時生長的金剛石薄膜的晶粒尺寸較小.
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關鍵詞:
- 金剛石薄膜 /
- 直流電弧等離子體噴射化學氣相沉積 /
- 復合襯底 /
- 制備工藝
Abstract: In order to synthesize high quality surface acoustic wave devices and explore the deposition process of diamond films, large-area high-quality diamond films were deposited on silicon substrate by DC-arc plasma jet CVD. Deformation of the silicon substrate which happened in the deposition process was eliminated by a special poly-substrate technique. The influences of the concentration of methane and the temperature of the substrate on the diamond films were studied, and the deposit process was optimized. The results showed that fine grain diamond films were gained when the volume fraction of methane was 1.8% and the temperature of the substrate was 1000℃. The roughness of the diamond films deposited under this condition is the lowest.-
Key words:
- diamond films /
- DC-arc plasma jet CVD /
- poly-substrate /
- process
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