Effect of hydrogen implantation at high temperature on the microstructural evolution of vanadium alloys
-
摘要: 研究了500℃高溫條件下注氫對V-4Cr、V-4Ti和V-4Cr-4Ti三種合金微觀結構的影響.在注氫實驗之前,V-4Cr合金的基體清晰干凈,而V-4Ti和V-4Cr-4Ti兩種合金的基體中則出現很多相互平行和垂直的針狀析出相,且大部分析出相周圍都存在著位錯.在500℃注氫實驗之后,V-4Cr合金基體中出現大量的分布不均的黑色點狀缺陷和缺陷簇,而V-4Ti和V-4Cr-4Ti兩種合金的基體中除產生點狀缺陷外,還出現高密度的氣泡,且V-4Cr-4Ti合金中氣泡的平均尺寸要稍小一些.另外,V-4Ti和V-4Cr-4Ti合金基體中原有的析出相在注氫實驗之后都發生不同程度的溶解.在觀察V-4Cr-4Ti合金基體中氣泡分布規律時發現,在距離晶界25 nm的范圍內幾乎看不到氣泡的存在,由此推斷晶界的存在可以抑制氫氣泡等輻照缺陷的產生.Abstract: The microstructure evolution of V-4Cr,V-4Ti and V-4Cr-4Ti alloys was studied before and after hydrogen implantation at 500℃. Before hydrogen implantation the matrix of V-4Cr alloy is clean,while parallel and vertical needle-like precipitates exist in the matrix of the other two alloys,and there are a lot of dislocations around the precipitates. After hydrogen implantation at 500℃ a large amount of uneven-distributed black dot defects and defect clusters appear in V-4Cr alloy. Besides the black dot defects,a lot of bubbles are found in V-4Ti and V-4Cr-4Ti alloys,and the average size of bubbles in V-4Cr-4Ti alloy is smaller than that in V-4Ti alloy. In addition,the dissolution phenomena of the precipitates happen in the both alloys. There are very few bubbles found near the grain boundary in the range of 25 nm in V-4Cr-4Ti alloy,which probably indicate that the defects,such as bubbles,caused by irradiation can be restrained by the existing of grain boundaries in this material.
-
Key words:
- vanadium alloys /
- hydrogen implantation /
- microstructural evolution /
- precipitates /
- bubbles
-
點擊查看大圖
計量
- 文章訪問數: 179
- HTML全文瀏覽量: 23
- PDF下載量: 7
- 被引次數: 0
下載:
