X-Ray Diffraction Study of the Interface Layer of Low Temperature Deposited Diamond Films

The constituent and the structure of the interface layer between the low temperature deposited diamond films and the single crystal silicon substrate was studed by X-ray diffraction (including small angle diffraction) technique. It was found that the interface layer for diamond film deposited at 700℃ was α-SiC. At lower temperature range (580-290)℃, the interface layer was composed of α-SiC and SiO₂. Crystal structure of α-SiC and SiO₂, and the d-spacings of the diamond films were discussed.