DIGM and the Diffusion Coefficient Associated with the Migrated Boundaries in Ag/Cu System

Guan Zhuoming; Liu Guoxun; Du Juan

doi:10.13374/j.issn1001-053x.1993.01.009

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Guan Zhuoming, Liu Guoxun, Du Juan. DIGM and the Diffusion Coefficient Associated with the Migrated Boundaries in Ag/Cu System[J]. Chinese Journal of Engineering, 1993, 15(1): 48-54. doi: 10.13374/j.issn1001-053x.1993.01.009

Citation:

Guan Zhuoming, Liu Guoxun, Du Juan. DIGM and the Diffusion Coefficient Associated with the Migrated Boundaries in Ag/Cu System[J]. Chinese Journal of Engineering, 1993, 15(1): 48-54. doi: 10.13374/j.issn1001-053x.1993.01.009

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DIGM and the Diffusion Coefficient Associated with the Migrated Boundaries in Ag/Cu System

doi: 10.13374/j.issn1001-053x.1993.01.009

Department of Materials Science and Engineering

Received Date: 1992-10-16
Available Online: 2021-10-18

Abstract

Abstract

Using scanning election microscope equipped with X-ray energy dispersion spectrometer and optical microscope the phenomena of diffusion induced grainboundary migration (DIGM) caused by Ag diffusing along the grain boundaries of Cu in Ag(film)/Cu (bulk) diffusion couple annealed at 400℃,480℃ and 580℃ with various times was studied. Based on the characteristics of the migrated boundaries, the diffusion coefficient of Ag in the migrated grain boundary was calculated by an appropriate solution of the diffusion equation for the migrated boundary.
- Ag/Cu system,
- DIGM,
- DIR,
- diffusion coefficient of the migrated grain boundary