Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements

Cui Congwu; Wang Jianjun; Ma Xingqiao; Wu Yu

doi:10.13374/j.issn1001-053x.1996.02.010

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Cui Congwu, Wang Jianjun, Ma Xingqiao, Wu Yu. Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements[J]. Chinese Journal of Engineering, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

Citation:

Cui Congwu, Wang Jianjun, Ma Xingqiao, Wu Yu. Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements[J]. Chinese Journal of Engineering, 1996, 18(2): 145-149. doi: 10.13374/j.issn1001-053x.1996.02.010

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Investigation on Traps in MPCVD Diamond Films by Thermal Stimulated Current Measurements

doi: 10.13374/j.issn1001-053x.1996.02.010

1. BSRL, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, PRC;
2. Department of Material Science, USTB, Beijing 100083, PRC;
3. Department of Physics, USTB, Beijing 100083, PRC

Received Date: 1995-09-10
Available Online: 2021-11-13

Abstract

Abstract

Carrier injection under liquid nitrogen temperature followed by thermal stimulated current(TSC) measurements were carried out for MPCVD diamond films. TSC peaks were observed obviously for as-grown samples.The peaks,however,almost disappeared after the first heating process.Having undergone hydrogen plasma treatment at ~900℃ for 2.5 hours for one sample,the peaks emerge again. Thermal stimulated traps emptying is postulated to be the origin of the TSC peaks, and the traps are related to hydrogen implantation.These traps,which energy level located in the band gap of diamond, can be eliminated via proper heat treatment.
- diamond films,
- defect, thermal stimulated current